| 摘要 |
PURPOSE:To contrive high speed action and high density integration by eliminating tunnel wiring by its resistance and area by a method wherein a diffused layer serving as the source or drain of an MOS transistor is extended, and then a part thereof is used as the wiring. CONSTITUTION:When a switching circuit is formed in a semiconductor substrate, a transistor Q1 is constructed by arranging a diffused layer 1 as the drain region, diffused layer 2 as the source region, and gate electrode 4 in addition thereto. A transistor Q2 is constructed by arranging a diffused layer 2 as the drain region, diffused layer 3 as the source region, and a gate electrode 5 in addition thereto. In this case, the diffused layer 2 is extended to the neighborhood of a load L connected to the terminal C, i.e., to the part across the wiring 16, and the extended layer 2, the diffused layer 3, and the gate electrode 5 constitute the transistor Q2. Extension of said layer 2 in such a manner makes it sufficient not to use the tunnel wiring. The part of extension of said layer 2 serves also the tunnel 13. Therefore, the resistance can reduce by the resistance of the tunnel wiring 13. |
