PROCESS FOR THE MANUFACTURE OF POLYCRYSTALLINE FILMS OF SEMICONDUCTORS FORMED BY COMPOUNDS OR ELEMENTS, AND FILMS THUS OBTAINED

摘要

There is described a method for preparing polycrystalline semi-conducting films comprised of two elements respectively from Groups III and V, or Groups II and VI of the Periodic Table, by irradiating with a laser beam a film which is comprised of at least two layers from elements selected with a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing into crystallites which are regularly aligned and with a size at least equal to the thickness of the resulting film.