发明名称 LEVEL SHIFT CIRCUIT
摘要 PURPOSE:To make the response high-speed and reduce a piercing current by connecting the other gates of two MOSFETs, to which MOSFETs are connected in parallel, to an output terminal and an inverted output terminal respectively. CONSTITUTION:The gate of an MOSFET Q68 is connected to an output terminal 603, and the gate of an MOSFET Q69 is connected to an inverted output terminal 604. Then, since the output terminal 603 and the inverted output terminal 604 are operated with voltages 0-E2, the gate potential becomes E2 when the FET Q68 is turned on, and the capability of the transistor acts greatly. Consequently, a high-speed response is possible, and the piercing current is reduced by the rise of the speed of a switching operation.
申请公布号 JPS59216328(A) 申请公布日期 1984.12.06
申请号 JP19830091065 申请日期 1983.05.24
申请人 SUWA SEIKOSHA KK 发明人 HASHIMOTO MASAMI
分类号 H03K19/0185;H03K5/02;H03K19/0948;(IPC1-7):H03K19/00;H03K5/00 主分类号 H03K19/0185
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