| 摘要 |
PURPOSE:To obtain an SiO2 film on a substrate by making to perform a photochemical reaction without using the mercury sensitization method by a method wherein light of wavelength of 300nm or less containing wavelength of 254nm is irradiated to mixed gas of SinH2n+2 (n>=2) and N2O. CONSTITUTION:A valve 11 is opened to introduce gas of Si2H6/N2O made the ratio to about 10 and mixed with H2 gas and Ar gas, etc. on a substrate 2 heated 16 at 100-500 deg.C, inside pressure of a reaction vessel is held to 0.1-10Torr evacuating by a vacuum pump 14, and the substrate is irradiated 10 by light of wavelength of 300nm or less containing light of wavelength of 254nm by intensity of the degree of 0.01-5W/cm<2> from a low pressure mercury lamp to form an SiO2 film on the substrate 2. At this time, although the film formation speed is a little slower than the case when the film is formed by a light source of 300nm wavelength or less containing light of wavelength of 185nm, but this method is practically usable sufficiently, and moreover generation of electric charge trapping centers owing to existence of Si clusters in the grown film is little, and the SiO2 film of superior quality can be formed. Moreover, formation of the film can be attained without using the mercury sensitization method according to this method, and a harmful influence to the human body is not generated. |
