发明名称 Method of reactive ion etching molybdenum and molybdenum silicide.
摘要 <p>The method of reactive ion etching molybdenum or molybdenum silicide include the steps of placing a sample (4) to be etched on one of two opposed electrodes (2, 3) in a vacuum chamber (1), charging an etching gas into the chamber, applying high frequency electrical power to the electrodes to generate a discharge between them, and etching the exposed portion of the sample. The gas is a mixture of chlorine and oxygen, with the oxygen flow rate being less than about 30% of the total flow rate of the mixture.</p>
申请公布号 EP0127268(A2) 申请公布日期 1984.12.05
申请号 EP19840301475 申请日期 1984.03.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE, TOHRU PATENT DIVISION
分类号 C23F4/00;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):01L21/31 主分类号 C23F4/00
代理机构 代理人
主权项
地址