| 摘要 |
PURPOSE:To obtain a device, sensitivity thereof is high and a rate of opening thereof is also high on the short wavelength side, by regularly forming a plurality of photodiodes functioning as light-receiving sections to one surface of a semiconductor substrate in a two-dimensional manner, forming a scanning circuit section to the other surface and previously combining these photodiodes and scanning circuit section by a diffusion region penetrating the substrate when preparing semiconductor light-receptor such as a solid-state image pickup plate. CONSTITUTION:A large number of photodiodes 11 of a conduction type reverse to a semiconductor substrate 10, which consists of Si, Ge or the like, functioning as light- receiving sections are diffused and formed regularly to one surface of the substrate 10 in a two-dimensional manner, and a horizontal and vertical scanning circuit 12 is shaped to the other surface while diffusion regions 13, which are connected to the circuit 12 and formed in order to shape connections with the diodes 11, are formed. Regions 14 penetrating the substrate 10 are formed through the irradiation of high- energy electron rays, a beam diameter thereof is reduced, thus connecting the regions 13 and the diodes 11. Accordingly, the connecting areas of the regions 14 are reduced sufficiently, and the rates of openings are increased without having an adverse effect on spectral characteristics. |
