| 摘要 |
<p>An integrated circuit arrangement has at least one pair of superposed transistor structures. The arrangement comprises first second and third superposed semiconductor layers (11, 12, 13) the second layer (12) being of opposite conductivity type to the first (11) and third (13) layers. At least one electrical contact (14) is formed on a surface of the third layer (13) and at least one semiconductive region (16) of the same conductivity type as the second layer (12) is formed in, or on, the said surface of the third layer (13). Electrical connections (17, 21) are made to the or each of the semiconductive regions and the first layer. At least the second and third layers form a heterojunction.</p> |
