发明名称 |
Method and apparatus for gas phase treating substrates |
摘要 |
Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.
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申请公布号 |
US4486461(A) |
申请公布日期 |
1984.12.04 |
申请号 |
US19830476551 |
申请日期 |
1983.03.16 |
申请人 |
FUJITSU LIMITED |
发明人 |
ITO, TAKASHI;KATO, ICHIRO |
分类号 |
C30B33/00;H01L21/205;H01L21/31;H01L21/324;(IPC1-7):B05D3/06;B05B5/00 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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