发明名称 Method and apparatus for gas phase treating substrates
摘要 Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.
申请公布号 US4486461(A) 申请公布日期 1984.12.04
申请号 US19830476551 申请日期 1983.03.16
申请人 FUJITSU LIMITED 发明人 ITO, TAKASHI;KATO, ICHIRO
分类号 C30B33/00;H01L21/205;H01L21/31;H01L21/324;(IPC1-7):B05D3/06;B05B5/00 主分类号 C30B33/00
代理机构 代理人
主权项
地址