SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

摘要

PURPOSE:To increase the speed of light-receiving response without being subjected to an adverse effect on various characteristics of light-receiving element itself by forming a collector region section in high concentration in a collector region on the shortest distance connecting an emitter electrode section and a collector electrode section. CONSTITUTION:An N<+> type growth layer 21 is formed on a semiconductor substrate 20, and an N type growth layer 22 is shaped. Impurity concentration in the growth layer 21 is made higher than that in the growth layer 22. A P<+> type base layer 23 is formed to the surface section of the growth layer 22, and an N<++> type emitter layer 24 is formed to the surface section of the base layer 23. The positions of the emitter layer 24 and the growth layer 21 are set on one straight line.