SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To realize a high resistance with small area by narrowing the width of epitaxial region surrounded by a separation layer and connecting the upper part of epitaxial region with a separation layer through diffusion of separation layer. CONSTITUTION:An epitaxial resistance 16' is formed on a substrate 17 and it is surrounded by a separated diffusion region 20. The epitaxial resistance 16' is connected externally through the contact region 19 and contact window 18. The separated diffusion region 20 is formed in such a way as connecting the upper layer of epitaxial resistance 16'. Therefore, an average width W becomes narrow and a high resistance can be obtained.