| 摘要 |
PURPOSE:To bring the color tone of a green light-emitting element to pure green by starting the evaporation of a P type impurity after a point of time when the temperature of a reaction furnace drops up to a fixed temperature and forming an N type gallium phosphide growth layer on the surface side of an N type gallium phosphide layer. CONSTITUTION:Gallium and a gallium phosphide polycrystal and a mixture of tellulium and a gallium substrate are arranged in a sliding board type graphite jig. The graphite jig is entered into a quartz pipe inserted into a growth furnace. The temperature of the growth furnace is elevated to saturate and dissolve gallium phosphide into gallium, and a gallium solution and the substrate are brought into contact. The growth furnace is cooled to grow an N type layer, a crucible, into which Zn is entered, is inserted into a Zn evaporation furnace kept at a fixed temperature when the growth furnace is cooled up to 977 deg.C, and the evaporation of Zn is started. The growth furnace is cooled continuously, a cooling is stopped at a fixed temperature, and the growth of the N type layer is completed. |
