| 摘要 |
PURPOSE:To obtain a P-type, multi-layered structure amorphous silicon carbide layer with wide optical gap and large optical conductivity by laminating films with large adding amount of C and films with small amount of it one after another. CONSTITUTION:P-type, multi-layered structure SiC films 11-18 are formed on a glass substrate 10 with high-frequency plasma decomposition method with mixture gas of monosilane gas, metan gas, and diborane gas. The adding amount of the diborane gas shall be 0.5ppm. The thickness of the P-SiC films 11, 13, 15, 17 shall be 20Angstrom , the thickness of the films 12, 14, 16, and 18 shall be 30Angstrom , and the thickness of x shall be 0.8. The P-Si film indicates the optical gap of 2.05eV and the optical conductivity of 2X10<-5>OMEGA<-1>cm<-1>, thereby providing a P-type, amorphous silicon cabide layer with wider optical gap, larger optical conductivity and superior performance, by use of the character of the multi- layered thin film structure. |
