发明名称 |
Fabrication of schottky-barrier MOS FETs |
摘要 |
Schottky-barrier MOS and CMOS devices are significantly improved by selectively doping the regions surrounding the Schottky-barrier source and drain contacts. For p-channel devices, acceptor doping is carried out in either a one-step or a two-step ion implantation procedure. For n-channel devices, donor doping is carried out in a two-step procedure. In each case, current injection into the channel is enhanced and leakage to the substrate is reduced while still maintaining substantial immunity to parasitic bipolar transistor action (MOS devices) and to latchup (CMOS devices).
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申请公布号 |
US4485550(A) |
申请公布日期 |
1984.12.04 |
申请号 |
US19820401142 |
申请日期 |
1982.07.23 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
KOENEKE, CONRAD J.;LEPSELTER, MARTIN P.;LYNCH, WILLIAM T. |
分类号 |
H01L27/088;H01L21/266;H01L21/285;H01L21/8234;H01L27/092;H01L29/10;H01L29/47;H01L29/78;H01L29/872;(IPC1-7):H01L21/28 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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