| 摘要 |
PURPOSE:To obtain good contact hole by heating a semiconductor substrate from the bottom surface in such a degree as the resist film becomes soft and selectively etching an insulating film by the chemical dry etching method of plasma generating region separating system. CONSTITUTION:A lower insulating film 12 consisting of PSG film and SiO2 film is formed on a semiconductor substrate 11 on which the SiO2 film is formed and a contact hole 13 is formed thereon. The, a lower Al wiring 15 to be connected to the diffusion region 14 which is the function region of semiconductor element is formed. Then an insulating layer 16 between the PSG layers is formed, the resist film 17 is applied thereon and an aperture 18 is formed. A substrate is then inserted on the heating device of the plasma generating chamber separation type chemical dry etching apparatus and the film 16 is seletively etched with the film 17 used as the mask. Since the resist film is heated from the side of substrate, the film 17 is rolled up and the side surface 20 of contact hole 19 is formed with gentle inclination. |
