发明名称 |
Semiconductor laser diode |
摘要 |
A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed under the second lower clad layer, wherein a refractive index of the first lower clad layer is identical with a refractive index of the upper clad layer and is lower than a refractive index of the second lower clad layer.
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申请公布号 |
US7263114(B2) |
申请公布日期 |
2007.08.28 |
申请号 |
US20040989434 |
申请日期 |
2004.11.17 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHO SOO-HAENG |
分类号 |
H01S5/00;H01S5/22;H01S5/30;H01S5/32;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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