| 摘要 |
PURPOSE:To enable to control the gate trigger current by controlling surface charges by a method wherein the first layer forming the level to capture the charge is formed at a part of an insulation film, and an electrode in ohmic contact with the second layer insulated and isolated from said layer and covering it is formed. CONSTITUTION:A polycrystalline Si layer 6a is formed from the surface of a substrate 1 via SiO2 film 4. Said layer 6a is put in the electrically floating state. The action of the layer 6a is to form the level to capture the surface charge. A polycrystalline Si layer 6b is formed from the layer 6a by sandwiching the SiO2 film 4. The metallic electrode 5d is formed in ohmic contact with the layer 6b, so that a bias can be impressed on said layer 6b after completion. The action of the layer 6b is to control the giving and taking of charges between the surface of the substrate 1 and the layer 6a by field effect.
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