| 摘要 |
PURPOSE:To form a thick silicon nitride film having a good quality of film at high speed by forming and laminating an amorphous silicon layer and a silicon nitride film in a specified region on the surface of a substrate, and recrystallizing the amorphous silicon layer. CONSTITUTION:Silicon ions are injected into the region on the surface of an Si substrate 3 where an Si3N4 is formed to form an amorphous silicon layer. Then the Si3N4 film having about 10Angstrom thickness is formed by irradiating the light. Succeedingly, the substrate 3 is heat-treated to recrystallize the amorphous silicon layer under the Si3N4 film. In this way, the nitride forming speed is increased, and the surface of the obtained Si3N4 film is smoothed as well. In addition, both the resistance to oxidation and the dielectric breakdown strength are increased sufficiently.
|
