| 摘要 |
<p>PURPOSE:To increase the light emitting area without thickening the semiconductor light emitting element by a method wherein the titled device is constructed in such a manner that the interval between the first and second conductive leads becomes wider in the periphery thereof than in the part of pinching said element. CONSTITUTION:The first and second conductive leads 121' and 122' of conical trapezoidal shape, etc. in the part of contact with said element 11 are provided, thus constructing the device so that the interval between these leads 121' and 122' becomes wider in the periphery thereof than in the part of piching said element 11. This construction enables to enlarge the angle of light emission and radiation as shown by B without thickly forming said element 11 and to increase the light emitting area.</p> |
