| 摘要 |
PURPOSE:To obtain a drive circuit for individually driving N-P-N type field effect transistors connected at the emitters in series and P-N-P type field effect transistors without an erroneous operation in such a manner that the transistors connected in series are used for switching an inverter. CONSTITUTION:An inverter is driven by a DC power source Ed, N-channel type MOSFETM1, M2 are connected in series, and a load L is connected between a connecting point (a) and an earth. An oscillator for driving an FETM1 is connected to the input side of a pulse transformer T1, and the output side is connected to the bases of N-P-N type transistor (TR)Q1 and P-N-P type TRQ3 connected at the emitters in series through a diode D1 and a smoothing circuit. The connector of the TRQ1 is connected to a positive DC voltage E1 at the connecting point (a) of a reference potential, and the collector of the TRQ3 is connected to the gate of the FETM1. The gate of the FETM2 is similarly driven. In this manner, the erroneous operations of the TRsQ1, Q3 can be prevented, thereby preventing the oscillation of the FETM1, M2 and the shortcircuit of the power source. |
