PHOTOSENSITIVE BODY

摘要

PURPOSE:To permit a thin film to retain high potential by forming a photosensitive body composed of an a(amorphous)-SiN type surface-modified layer and an a-Si type photoconductive layer and an a-SiC type electrostatic charge transfer layer. CONSTITUTION:A charge transfer layer 2 made of a-SiC hydride or fluoride contg. 10-30atomic% C is formed on a substrate 1. On this layer 2, a photoconductive layer 3 made of a-Si hydride or fluoride is formed. Further on this layer 3, a surface-modified layer 4 made of a-SiN hydride or fluoride is formed. It is desirable to form a charge blocking layer made of a-SiC hydride or fluoride doped with an element of group VA of the periodic table between the layer 2 and the substrate 1.