| 摘要 |
PURPOSE:To enable to provide high withstand voltage of a gate turn-OFF thyristor by setting a P-N junction of a slot to positive level. CONSTITUTION:After an N type base region 3, a P type base region 4, an N type emitter region 5 or partly a cathode region are sequentially formed in 4 layers on a P type emitter region 1 and N type anode region of an n<+> region 2, a P type region 11 is formed on the periphery. After a groove 12 is formed to intrude to the region 11 at the periphery of the anode electrode 6, a glass passivation 13 is formed on the groove 12. In this case, the groove 12 is formed at the junction between the region 4 and the region 3 at a positive level. Accordingly, the depletion layer is readily deformed near the groove 12, the electric field intensity is weakened in a structure adapted for high withstand voltage. |
