| 摘要 |
PURPOSE:To form the resist pattern of multilayer structure accurately without defects by use of the same-type resist by forming the second resist pattern after modifying a surface of the first resist by a surface treating solution to improve the adhesive properties. CONSTITUTION:A semiconductor substrate 1 is covered with an insulating film or a film to be etched such as polycrystalline Si to form a pattern 3 of the first positive resist. A polycrystalline Si pattern 2a is formed by irradiation with CF4 plasma 4 followed by the heat treatment in an temperature atmosphere of the softening point of the resist or more to cure said resist. A surface fluorine altered layer 3a is subjected to a spin-on treatment, e.g. with a thinner solvent of the first positive resist, ethyl cellosolve xylene and a surface modified layer 3d is formed. The substrate is coated with the second positive resist to form a pattern 5b. As the positive resist surface 3d has been modified, the second positive resist can be spread with high uniformity. |
