| 摘要 |
PURPOSE:To optimally design the transition region between a base and a collector without losing a DC characteristic by activating the advantages of the wide band gap collector structure by setting to satisfy the setting conditions of the width of the transition region of a hetero junction between the base and the collector. CONSTITUTION:A transition region 3 having an n type collector region 2 made of the second type semiconductor substance producing a discontinuity of Ec(eV) in a transmission band in a junction when forming a direct hetero junction between a p type base region 4 made of the first type semiconductor substance and the first type semiconductor substance having wider band gap, and the thickness Wt (cm) gradually varying in the composition of the semiconductor substance between the region 4 and the region 2 is provided. In a hetero junction bipolar transistor formed in this manner, the region 3 is contained in a depletion layer produced in the state that a breakdown voltage is applied between the base region 4 and the collector region 2, and the conditions designated by the unequalities (1), (2) are satisfied between the Ec and the Wt.
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