| 摘要 |
PURPOSE:To highly integrate an element by forming an film pattern which is smaller than a mask material pattern by side etching, thereby forming an ultrafine field oxidized film. CONSTITUTION:A silicon nitride film 3 and a polycrystalline silicon film is accumulated on a thermally oxidized film 2 on the surface of a silicon substrate 1, isotropically etched, then side etching occurs, and a polycrystalline silicon film pattern 4' which is smaller than a photoresist pattern 5 is formed. An aluminum film 6 is deposited, the pattern 5 is removed, and an aluminum film pattern 6' is formed on the film 2. The film 3 is etched, boron ions are implante d. The pattern 4' and the pattern 6' are removed, wet oxidized to form a field oxidized film 7. |
