| 摘要 |
PURPOSE:To reduce the absorption loss in a doped layer by using an element which is effectively operated as an N type impurity or P type impurity as one component of a back surface electrode provided opposite side to the light incident side, thereby entirely omitting the doped layer or forming extremely thin film. CONSTITUTION:An a-Si thin film 3 is, for example, formed only of a P type layer 31 and an I type layer 32, and a back surface electrode 6 is formed by a vacuum deposition method with a gold and antimony alloy as a deposition source. The surface temperature of the film 3 deposited in a vacuum is continuously heated at 200 deg.C. In case of p type of glass/transparent electrode/N-I-P/ back surface electrode structure, gallium of P type impurity is used as one component in a gold-gallium alloy on the back surface electrode material. Further, when an a-Si thin film is formed on a metal substrate, III group or V group element of periodic table may be contained in the metal substrate itself. |
