| 摘要 |
PURPOSE:To lower thermal resistance without reducing the degree of integration by zigzag arranging unit cells on a semiconductor substrate while being mutually separated. CONSTITUTION:A heat sink 12 in beryllium is loaded on a heat sink 13 consisting of a copper layer, and an epitaxial layer 8 constituting a collector is placed on the heat sink 12. A plurality of bases 9 are formed on the layer 8, and emitters 10 are formed on the bases 9. Each unit is disposed zigzag on the layer 8 in the units of high-frequency high-output bipolar transistors shaped in this manner. The effect of heat from the mutually adjacent units can be reduced by arranging each unit in this manner, and a mutual effect by an extension in the lateral direction of a hot flow to the heat sinks can be inhibited substantially.
|
