| 摘要 |
PURPOSE:To obtain an amorphous or a semi-amorphous film on a substrate by a method wherein silane of hydrogenated or diluted with He is filled up in a cylinder by the prescribed silane density and pressure, led in a reaction oven, and made to perform a plasma vapor phase reaction in the prescribed condition. CONSTITUTION:Silane, especially SiH4 is diluted with He to be filled up in a cylinder, and when internal pressure Pkg/cm<2> and silane density N% are selected to NP>=300 (N<=100%), SiH4 is decomposed to be polymerized, and formation of SixHy (x>=2, y>=4) or m(SiH4) of associated condition according to hydrogen bond is accelerated. Gas thereof is led in a reaction oven of 10<-3>-10Torr, and induction energy of 50kHz-10GHz is applied to form a film on a substrate heated at 25-700 deg.C. At this time, the polymerized or associated silane is agglomerated in spite of in a vapor phase at activation time in a reaction system, and an amorphous or a semi-amorphous film of semi-crystalline cluster lapped structure is formed. The grain boundary of the bulk cluster thereof is indefinite, concentration of interfacial levels is not generated, and moreover, when impurities (B2H6, PH3, etc.) are added into the cylinder, B and P are distributed uniformly in the cluster, and the ionization rate thereof is extremely high. |
