MAGNETIC BUBBLE MEMORY

摘要

A magnetic bubble store formed of a series of longitudinally oriented shift registers and at least one transversely oriented access contour register having a single access point corresponding to each access end of each longitudinally oriented shift register, wherein magnetic bubbles are displaced in the longitudinally oriented shift registers by applying a rotary magnetic field thereto, and wherein magnetic bubbles are displaced in the transversely oriented access contour register by applying an electric current thereto. The longitudinally oriented registers are formed of motifs defined by ion implantation in a magnetic garnet layer. Structure for applying the electrical current to the access contour register includes two conductive sheets superimposed on the magnetic garnet layer in the vicinity of the access ends of the longitudinally oriented registers, wherein the sheets are insulated from one another and from the magetic garnet and include openings arranged in the vicinity of respective access ends of the longitudinally oriented shift registers. Other openings are positioned so as to forward the bubbles which have obtained access to the longitudinally oriented shift registers to an access station or to other longitudinally oriented shift registers.