| 摘要 |
PURPOSE:To prevent solder layers from thermal destruction, and to obtain a high reliable semiconductor device at low cost when a semiconductor element and lead electrodes are to be connected using the solder layers to wiring metal layers provided on an IC substrate by a method wherein metal wires are sealed previously in the solder layers to be used for the lead electrodes. CONSTITUTION:A heat radiating plate 1 is fixed using a solder layer 3 to the back of a circuit substrate 2 consisting of ceramics, and wiring metal layers 4 are adhered to the surface of the substrate 2. Then a semiconductor element 7 is loaded thereon, and electrode terminals provided thereto are connected using solder layers 12 to lead electrodes 5a, 5b standing up outside. After then, the parts thereof are covered with a package case 8 to form a sealed semiconductor device. At this construction, the under edges of the lead wirs 5a, 5b standing up are bent horizontally, copper wires 11 of the degree of 0.01-1.0mm. diameter are wound around thereto, and the solder layers 12 are formed containing them. Accordingly, the solder layers 12 are made to endure even distortion according to the difference of thermal expansions between the ceramics and the copper, and thermal destruction is avoided. |
