| 摘要 |
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas atmosphere. This impurity has such a high diffusion velocity as can suppress the vaporization, from ZnSe crystal, of Se atoms having a vaporization speed lower than the diffusion speed of gold, and thus desired pn junction can be formed. |
