Integrated circuit e.g. dynamic RAM, for use in electronic device, has resistive memory cell, and p-channel transistor that produces predetermined reading voltage for smaller resistance range which has reference conditions of reference cell

摘要

The circuit (200) has a resistive memory cell (210), which is switched between high and low impedance memory states, and a reference cell (220) with a resistance value, which reproduces a reference condition. A p-channel transistor (50) and a remote voltage regulator unit (60) apply predetermined reading voltages to the cells (220, 210), respectively. The unit (60) produces the voltage for a resistance range, which has the memory states of the cell (210). The transistor produces the voltage for a smaller resistance range, which has the reference conditions of the reference cell. An independent claim is also included for a method for determining a memory state of a resistive memory cell.