| 摘要 |
<p>PURPOSE:To obtain a memory device, mounting density thereof is improved and which is miniaturized, by inserting and fixing an electrode bar of a frame body into a through hole of a first substrate and overlapping and inserting a plurality of second substrates into the frame body. CONSTITUTION:Electrodes 6 for fixing frame bodies 4 are fixed to a through- electrode 18 mounted into through holes 2 of a first substrate 1 by solder 19. Electrode bars 5 are bent in the upper surfaces of the frame bodies 4, one is extended on the inner wall of the frame body 4, and the other is penetrated into the frame body 4 and projected from a lower surface. Second substrates 7 inserted into the frame bodies 4 are compression-bonded with the first substrate 1 by a spacer 12 and a cover body 13, and defective contact is prevented. The electrode bars 5 and leads 10 projecting to the notch sections 8 of the second substrates 7 are brought into contact at two points by notching the noses of the leads 10 to a V shape, and electric connection is made sure.</p> |
