| 摘要 |
PURPOSE:To reduce cracks generated on an insulating film by forming an insulating film only on the metal wiring region. CONSTITUTION:An oxide film 2 is laid over a substrate 1 and a metal wiring 3 is provided thereon. After a passivation film 4 as an insulating film for surface protection is formed by the chemical vapor deposition method, a patterning is carried out to the metal wiring area 3 with a little wider width than such wiring area by the photolithography process and the film 4 is covered with a part of metal wiring 3. The film 4 covers only the metal wiring part as mentioned above but does not cover the other part. Therefore the covering area can be saved remarkably as compared with the covering of entire part in the prior art. As a result, all stress applied on the film 4 can be reduced and crack generated on the film 4 can also be reduced. |
