发明名称 |
Silicon carbide material for low-melting point fusion metal |
摘要 |
A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.
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申请公布号 |
US4485143(A) |
申请公布日期 |
1984.11.27 |
申请号 |
US19820390135 |
申请日期 |
1982.06.18 |
申请人 |
TOSHIBA CERAMICS, CO., LTD. |
发明人 |
INOUE, SUSUMU;SAKASHITA, ISAO;MEGURO, KAZUNORI;HAMAGUCHI, KUNIO |
分类号 |
C04B41/50;C04B41/87;(IPC1-7):B32B15/00 |
主分类号 |
C04B41/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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