发明名称 Silicon carbide material for low-melting point fusion metal
摘要 A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.
申请公布号 US4485143(A) 申请公布日期 1984.11.27
申请号 US19820390135 申请日期 1982.06.18
申请人 TOSHIBA CERAMICS, CO., LTD. 发明人 INOUE, SUSUMU;SAKASHITA, ISAO;MEGURO, KAZUNORI;HAMAGUCHI, KUNIO
分类号 C04B41/50;C04B41/87;(IPC1-7):B32B15/00 主分类号 C04B41/50
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