| 摘要 |
PURPOSE:To reduce the capacitance of the junction section of source-drain diffusion layers, etc. by forming an isolation surface on the semiconductor element side at an acute angle through ion-etching or reactive-ion etching or the like regarding dielectric isolation. CONSTITUTION:Grooves 12, which have inclined planes at acute angles (less than 90 deg.) and are buried with dielectrics, are formed on the semiconductor element forming side in an Si substrate 11 as a dielectric isolation semiconductor substrate. The structure is formed in such a manner that figure-shaped resists are shaped through photo-lithography and slender deep grooves are shaped obliquely to Si through skew Ar ion-etching and the grooves are buried with water glass, etc. Since the grooves may not be joined mutually and a semiconductor element need not always be dielectric-isolated completely, not only the dielectric grooves are formed in both the X direction and Y direction of the plane of the semiconductor element but also the grooves are formed only through etching, in which an angle is inverted twice only in the X direction, and the dielectrics may be buried. |
