| 摘要 |
PURPOSE:To remove a bird beak and a defect, and to obtain an integrated element having high density by directly forming a silicon nitride film on a silicon substrate without shaping a pad oxide film on the substrate, patterning the silicon nitride film and forming a field oxide film when executing an oxide film isolating process. CONSTITUTION:A resist layer 13 is applied and formed on a silicon nitride film 12 formed on a silicon substrate 11, the resist layer 13 section on a region except a zone, in which an active region must be shaped, a region, in which a field oxide film must be shaped, in the silicon substrate 11 is removed through photolithography technique, and the resist layer is patterned. When the silicon substrate is field oxidation-treated, a field oxide film 16 is formed in a surface region, from which the silicon nitride film 12 is removed, in the silicon substrate, and the active region on the lower side of the residual silicon nitride film 12 is not oxidized. A laser or electron rays 18 are projected to the silicon substrate 11, and a defect region 17 is converted into an active region having no defect. |
