| 摘要 |
A lateral junction field effect transister device includes both a surface semiconductor layer located between the gate and drain contact regions of the device and a buried semiconductor layer which extends beneath at least the drain contact region and the surface semiconductor layer of the device. The buried layer may be in the form of a continuous layer extending beneath the gate, source, and drain contact regions of the device as well as the surface semiconductor layer, or it may be provided in annular form with an aperture beneath the source and gate regions. The annular central buried layer configuration may further include an additional buried layer portion extending beneath the source region of the device. Devices having buried and surface layers in accordance with the invention feature improved high-voltage breakdown characteristics, enhanced conductivity in the "on" state, and the ability to operate in the source-follower mode.
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