| 摘要 |
PURPOSE:To improve the degree of integration of a semiconductor integrated circuit device by forming a contact section with a foundation of a first polycrystalline Si layer and a contact section with the first polycrystalline Si layer of a second polycrystalline Si layer at the same position. CONSTITUTION:A first insulating film 12 is formed on the surface of a semiconductor substrate 11, a foundation diffusion layer 13 and a first polycrystalline Si wiring layer 14 are connected and formed through a contact hole bored to the first insulating film 12, and the foundation diffusion layer 13 is connected to the second polycrystalline Si wiring layer 16 on a second insulating film 15 on said first polycrystalline Si layer 14 on the first polycrystalline Si layer 14 on the contact hole bored to the first insulating film. |
