| 摘要 |
PURPOSE:To realize integration without short-circuit of wirig by adequately connecting circuit elements in the element region by burying signal lines in the element separating region while these are insulated from the substrate. CONSTITUTION:A groove 12 is formed in the desired shape with width of 1mum, depth of 1mum to the P type Si substrate 1 by the reactive ion etching in order to form the element region 2 and the P<+> type layer 4 is then formed by ion implantation. The entire part is covered with the thermal oxide films 3, 8 and the signal line 5 consisting of conductive material such as MoSi2 is buried in the groove 12 by sputtering. Moreover, a thermal oxide film 8 is caused to grow. In this case, since the signal line 5 is porous, the thick film 8 is formed on the signal line. Next, an impurity layer 7 for circuit element to be formed to the element region 6 is formed and the Al wiring 11 which connects the layer 7 and signal line 5 is formed on the insulating layer 8. Owing to such structure, a number of wirings of substrate surface is reduced and thereby highly reliable device resulting in less short-circuit troubles can be obtained. |
