| 摘要 |
PURPOSE:To enable the mass production of the titled device of high gm by a method wherein the hole for diffusing the gate region much narrower than an Si nitride film formed to the minimum width by photoetching is obtained by using selective oxidation. CONSTITUTION:The Si nitride film 15 is selectively adhered on the scheduled gate region 18 on the channel region 12, and the surface of a semiconductor substrate 11 is selectively oxidized with said film 15 as a mask. At this time, the semiconductor substrate 11 under said film 15 is not selectively oxidized, and accordingly a mesa part 17 is formed. Next, the channel region 12 serving as the scheduled gate region 18 is exposed by etching an Si oxide film 16. Thereby, the hole for diffusing the gate region 18 of a width much smaller than that of said film 15 can be obtained. |
