| 摘要 |
PURPOSE:To enable the flow of current to the ground side in the state that a complementary P-N-P transistor turns on even by the flow of a large current to the output side and thus to improve the breakdown level of an N-P-N transistor by adding said P-N-P transistor to the output terminal of the N-P-N transistor. CONSTITUTION:The emitter E1 side of the N-P-N transistor Q1 serves as the output terminal, and a power source potential VCC is impressed on the collector C1 side via resistor R. The emitter E2 side of the P-N-P transistor Q2 is connected to the output side of the transistor Q1, and the collector C2 side (substrate) is grounded. The base B1 of the transistor Q1 and the base B2 of the transistor Q2 are both connected to the power source potential VCC. In such a circuit, when the large current I1 of a higher potential than said potential VCC flows to an output pin, it flows to the substrate (ground side) of the transistor Q2 as the current I2 by the ON-stage of the transistor Q2, resulting in no load for the transistor Q1. Accordingly, the breakdown level of the transistor Q1 enhances. |
