| 摘要 |
PURPOSE:To enable to obtain a sensing amplifier of high sensitivity by a method wherein a conductive film connected in constant potential between a bit line and an address line, and between the bit line and an input line, thereby enabling to remove a coupling capacity. CONSTITUTION:An insulating film 15 is provided on bit lines 2 and 3, and a conductive film 16 is formed between insulating films 14 and 15. Said film 16 is formed using Si, for example, and it is connected in constant potential of GND, for example. In the layout formed on the sensing amplifier 1 constituted as above, as the film 16 has shield effect for the bit lines 2 and 3, no coupling capacity is present. Accordingly, no noise is generated due to coupling capacity on the bit lines 2 and 3 even when the levels of address lines 6, 6', 7, 7' and input-output lines 8 and 10 are changed from L to H or H to L and the like at any sensing time, thereby enabling to accomplish a high speed movement. |
