| 摘要 |
PURPOSE:To enhance mask effect and obtain a glass passivation type semiconductor device having high voltage resistivity by employing the double-layer structure of the Si oxide film and acid proof ink film to the mask for MESA etching. CONSTITUTION:After the P type diffusion layer 2 and N<+> type diffusion layer 3 are formed on an Si substrate 1, an Si oxide film 11 is formed to the entire part of both main surfaces. Next, the film 11 is etched with the acid proof ink film 12 at the desired region of film 11 and the etching mask 13 in the double-layer structure of film 11 and film 12 is formed only to the region covered with the film 12. Thus, the MESA etching is carried out using the etchant of the nitric acid-fluoric acid system and the mask 13 in order to form a groove 7 reaching the P-N junction 6. Thereafter, the surface protection is conducted by the passivation glass 8 and moreover the electrodes 9 and 10 are formed. |
