| 摘要 |
PURPOSE:To realize high accuracy of element isolation structure and prevent reduction of active region by forming element isolation oxide film in such a structure that it is projected from an Si substrate. CONSTITUTION:A thermal oxide film 12 is caused to grow on the P type Si substrate 11 forming an MOSIC, moreover a silicon nitride layer 13 is deposited by a low pressure chemical vapor deposition method and the specified pattern is formed by rotatingly applying the resist 14 thereon. The film 12 and layer 13 of the region other than the pattern by the resist 14 are etched by gas and thereby a groove is formed. Moreover, a groove is formed in the specified depth on the substrate 11 and coating glass is applied to the groove and resist 14. The resist 14 is removed by the specified method and the coated glass layer 15 applied to the groove is projected from the surface of substrate 11. Thereby, high precision element isolation structure can be realized and reduction of the active region of MOSIC is prevented. |
