| 摘要 |
PURPOSE:To enable to attain a higher integration degree by a method wherein one Josephson element is respectively constituted separately on the both sides of a gland plane. CONSTITUTION:A first Josephson element has been formed on the upper side of a gland plane 2, while a second Josephson element has been formed on the lower side thereof. That is, a lower conductor 4 has been directly formed on a substrate 1, and, at the same time, a control line 18 also has been formed thereon. A second insulating layer 17 has been formed in such a way as to cover this control line 18 and an upper conductor 16 has been formed extending from the surface of an insulating thin film 15 formed on one part of the surface of the conductor 14 to the surface of the layer 17. Moreover, a first insulating layer 13 has been formed extending from the surface of the conductor 16 to one part of the surface of the conductor 14, where the film 15 has not been formed on the conductor 14, and a gland plane 2 has been formed thereon. On this gland plane 2 has been formed one more Josephson element. By constituting a Josephson element integrated circuit device using the Josephson junctions formed in such a way, the integrated degree can be upgraded.
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