| 摘要 |
PURPOSE:To obtain a semiconductor element having preferable heat dissipation and large carrier mobility by using a semiconductor diamond or diamondlike carbon. CONSTITUTION:A P type diamond, to which 0.01% of B is added, is produced by a superhigh pressure device, and a high frequency discharge is executed in mixture gas of C2H4 and PH3 with the diamond as a substrate to deposit a film of 3mum. B is implanted by a known ion implantation method to form a P type region, an aluminum electrode and an insulating film obtained by high frequency decomposition of C2H6 are covered on the prescribed region to form a planar transistor. This transistor is used in a high frequency output amplifying circuit, 100MHz of high frequency is operated by the power source or 15V to obtain an output of 3.5W. |
