| 摘要 |
PURPOSE:To reduce wiring resistance without impairing insulation between an FET sensor and a solution to be detected, by using metal silicide wirings. CONSTITUTION:The source region and the drain region and the source electrode and the drain electrode of a transistor are connected by metal silicide wires 31, respectively. Thus, the wiring is performed by using the metal silicide 31 comprising molybdenum and silicon or tungsten and silicon. A silicon oxide layer 32, which is formed by oxidizing the silicide, forms an insulating layer. Usually, the resistivity value of the metal silicide is larger than that of the simple substance of metal by an order of magnitude. When impurities are diffused in the silicon, however, the resistivity value is as small as 10<-1>-10<-2>, and the value of the wiring resistance can be made to be several tens - several hundred OMEGA. Since the insulating layer can be readily formed by the oxidiation of the metal silicide, approximately the same manufacturing processes as those in the conventional method can be used. |
