| 摘要 |
PURPOSE:To obtain an electrode which is in a well insulated state by forming a buffer layer on a crystal or waveguide layer grown after doping a metallic or noble metalic element into a Bi12SiO20 substrate and by forming a thin film pattern on the buffer layer. CONSTITUTION:A thin oxide film of SiO2 or the like is formed as a buffer layer 2 on a Bi12SiO20 substrate by vacuum deposition, sputtering or other method. A thin Ti film is formed on the layer 2 by sputtering, vacuum deposition or other method, and it is finely processed by photolithography or other technique to form an electrode 3. Since the thin Ti film is formed on the substrate 1 with the buffer layer 2 of SiO2 in-between, Ti is prevented from remaining at a part close to the surface of the substrate 1, so an electrode which is in a well insulated state can be obtd. The electrode is used in an optical switch, an optical integrated circuit, an SAW device or the like. |
