| 摘要 |
PURPOSE:To synthesize InP polycrystals of high purity efficiently in the vapor phase, by reducing In oxide vapor with a thermally dissociated phosphine gas. CONSTITUTION:Molten In 1 is placed on a boat in an apparatus, and In2O3 is placed thereon. Resistance heating elements 7 and 10 are respectively set at a polycrystal deposition temperature and geeration temperature of In2O3, and a graphite heating element 9 is set at the reaction temperature. A carrier gas, e.g. Ar, is passed from a carrier gas inlet pipe 3 and a preheated and thermally dissociated phosphine gas is passed from a phosphine inlet pipe 4. Fine particulate polycrystals of InP are stuck and deposited on a crucible 6 and a protrusion 5 for producing eddy currents by the above-mentioned operation. According to the method, impurities contained in the molten InP are left in the boat, and purification is carried out even in reduction of In2O3. Thus, the impurities do not take part in the synthetic reaction, and fine particulate polycrystals of Inp of high purity are obtained.
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