| 摘要 |
PURPOSE:To compensate for atomic strain, by making an element, whose atomic radius is larger than that of silicon, and an element, whose atomic radius is smaller than that, to coexist as a doping element and an additive IV-group element. CONSTITUTION:Semiconductor materials are introduced into a vacuum container so that the materials are combined in the following magnitude relation-ship of atomic radiuses: doping element>silicon>IV-group element; or IV-group element>silicon>doping element. A semiconductor doped layer, wherein amorphous silicon is a main body, is manufactured by glow discharge decomposition. Lattice strain is compensated by introducing the IV-group element, whose atomic radius is larger than that of the silicon. An amorphous silicon layer, whose lattice is well aligned, is formed, and electric conductivity is improved by about an order of magnitude. |
